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MRAM WAFER-LEVEL TEST · SELF-RELIANT

Filling the gap in China's high-end
magnetic memory test equipment

Jishunxin Technology tackles the key challenges of MRAM testing, on the verge of completing the nation's first 12-inch fully-automated, high-throughput, high-speed MRAM wafer test platform.

Core Products

Core Product Lines

Configurable, fully self-developed wafer-level test systems for STT / SOT / VCMA-MRAM.

P1

12" Automated High-Throughput Test Platform

China's first home-grown 12-inch MRAM wafer-level high-speed test system — from manual operation to unattended, integrating high-precision magnetic control, picosecond pulse test and AI-assisted analytics.

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P2

Multi-State Memory Characterization System

Configurable architecture for STT / SOT / VCMA-MRAM, extracting toggle write, thermal stability, read/write disturb and endurance characteristics.

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P3

Wafer-Level Reliability Acceleration

Arrhenius-based acceleration algorithm compresses months of reliability validation into weeks, combined with high-sensitivity domain imaging and electrical failure analysis.

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Why Jishunxin

Advantages vs. Industry Pain Points

DimensionIndustry Pain PointJishunxin
ThroughputLong single-die test time, capacity bottleneckParallel multi-site, +300% throughput
Field precisionPoor external field uniformity, edge effectsBuilt-in 3D Helmholtz coil, <0.5% uniformity
Data valueLow utilization of massive test dataReal-time yield & process correlation engine
Supply chain100% import dependency on core toolsFully self-reliant, secure supply chain

Let's quantify the limits of MRAM together

From R&D validation to mass-production monitoring, we co-develop dedicated test solutions for your devices.

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